unisonic technologies co., ltd uf1010e power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-306.c n-channel power mosfet ? description using high technology of utc, utc uf1010e has the features such as: low r ds(on) , fast switching, and low gate charge. like features of all power mosfet devices? features, utc uf1010e can satisfy almost all the requirements of high efficient device form customers. ? features * r ds(on) <12 m ? @v gs =10v * ultra low gate charge :130 nc * low c rss = 140 pf(typ. ) * fast switching capability * avalanche energy specified * improved dv/dt capability * high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 uf1010el-ta3-t uf1010eg-ta3-t to-220 g d s tube uf1010el-tf1-t uf1010eg-tf1-t to-220f1 g d s tube UF1010EL-TF2-T uf1010eg-tf2-t to-220f2 g d s tube
uf1010e power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-306.c ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit gate to source voltage v gss 20 v drain current continuous (v gs =10v) i d 84 a pulsed (note 2) i dm 330 avalanche current (note 2) i ar 50 a avalanche energy repetitive (note 2) e ar 17 mj single pulsed (note3) e as 1180 mj power dissipation (t c =25c) to-220 p d 200 w to-220f1/ to-220f2 54 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) t j =25c, l=260 h, r g =25 ? , i as =50a ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62 c/w to-220f1/ to-220f2 62.5 junction to case to-220 jc 0.75 c/w to-220f1/ to-220f2 2.3
uf1010e power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-306.c ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 60 v drain-source leakage current i dss v ds =60 v,v gs =0 v 25 a v ds =48 v,v gs =0 v,t j =150c 250 a gate-source leakage current i gss v gs =20 v, v ds =0 v 100 na breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =1ma 0.064 v/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on resistance(note) r ds ( on ) v gs =10 v, i d =50 a 12 m ? dynamic parameters input capacitance c iss v ds =25 v, v gs =0 v,f=1mhz 3210 pf output capacitance c oss 690 pf reverse transfer capacitance c rss 140 pf switching parameters total gate charge q g i d =50a,v ds =48v,v gs =10v 130 nc gate-to-source charge q gs 28 nc gate-to-drain ("miller") charge q gd 44 nc turn on delay time t d ( on ) v dd =30v,i d =50a,r g =3.6 ? v gs = 10v 12 ns turn on rise time t r 78 ns turn off delay time t d ( off ) 48 ns turn off fall time t f 53 ns internal drain inductance l d 4.5 nh internal source inductance l s 7.5 nh diode forward voltage v sd t j = 25c, i s = 50a,v gs = 0v 1.3 v maximum continuous drain-source diode forward current i s 84 a maximum pulsed drain-source diode forward current i sm 330 a reverse recovery time t r r t j =25c,i f =50a, di/dt=100a/ s 73 110 ns reverse recovery charge q rr 220 330 nc note: pulse width 400 s; duty cycle 2%.
uf1010e power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-306.c ? test circuits and waveforms v ds 90 10 v gs t d(on) t r t f t d(off) switching time waveforms switching time test circuit pulse width 1s duty cycle 0.1 v ds v gs r g v gs= 10v dut - + v dd r d t p i as v (br)dss unclamped inductive waveforms unclamped inductive test circuit v ds l v gs r g v gs =10v 0v t p dut i as 0.01 ? + - v dd 15v driver q g q gd q gs v g charge 10v basic gate charge waveform gate charge test circuit 3ma v gs i g(ref) = d.u.t - + v ds + - 12v 2f 50k ? 3f i g i d
uf1010e power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-306.c ? typical characteristics 200 0 0 6 drain current vs. source to drain voltage drain current,i d (a) source to drain voltage,v sd (mv) 800 400 600 8 4 12 24 0 0 0.2 0.4 20 drain-source on-state re sistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0.1 8 4 0.3 16 v gs =10v, i d =20a 1000 2 10 drain current,i d (a) drain current,i d (a) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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